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Z1104 • IHW15N120E1XKSA1 Infineon IGBT Transistor 

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Z1104

  • $7.80
  • 4+ $7.35
  • 10+ $6.80
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  • Includes GST
 

Weight:0.00800Kg

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Last updated 18-10-17 11:20:10

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Overview

Reverse conducting IGBT with monolithic body diode.

Infineon offers a broad range of Discrete IGBT for hard switching applications such as Welding, Solar, UPS, Home Appliances and Industrial Drives as well as for soft switching applications such as Induction Cooking and other resonant applications. The devices come co-packed with an anti-parallel diode or with monlithically integrated diode to fit your application best.

Specifications

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 156W
  • Switching Energy: 300J (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Operating Temperature: -40C ~ 150C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3

*Specifications are subject to change without notice.

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